An accurate description of quantum size effects in InP nanocrystallites over a wide range of sizes
نویسندگان
چکیده
We obtain an effective parametrization of the bulk electronic structure of InP within the Tight Binding scheme. Using these parameters, we calculate the electronic structure of InP clusters with the size ranging upto 7.5 nm. The calculated variations in the electronic structure as a function of the cluster size is found to be in excellent agreement with experimental results over the entire range of sizes, establishing the effectiveness and transferability of the obtained parameter strengths. PACS No. 61.46.+w, 73.22.-f
منابع مشابه
Nonlinear phenomenon in nanocrystallites produced by laser-induced etching of silicon
Self-phase modulation of continuous wave argon-ion laser beam by a medium containing silicon nanocrystallites is reported here. Refractive index of nanocrystallites shows nonlinear behavior with the intensity of probing laser beam when size of nanocrystallites is decreased below 8 nm. A simple quantitative explanation for the observed optical fringes is given in terms of distribution of sizes o...
متن کاملStrong Optical Filed Intensity Improvement Introducing InGaAsP Quantum Wells in InP Nanocavity
This paper presents the optical characteristics of a quantum well doped InP nanocavity.The resonance wavelength of the nanocavity and the optical field intensity is calculated before and after presence of the quantum wells. The resulting huge filed intensity of about 1.2×108 respect to the incident field is the effect of quantum wells placed in vicinity of center of nanocavity.
متن کاملStabilized electronic state and its luminescence at the surface of oxygen-passivated porous silicon
Photoluminescence ~PL! spectra of as-made porous Si samples were obtained in a wide peak-wavelength range. After exposure to air or coupling with C60 molecules, the PL peak shifts to a pinning wavelength within the range of 610–630 nm. This pinning wavelength is almost independent of the size of the original porous Si nanocrystallites and both redshifting and blueshifting can occur for differen...
متن کاملEffect of variation of specifications of quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL)
Abstract: In this study, the effects of variation of thickness and the number of quantumwells as well as the contact length were investigated. In this paper, a vertical cavity surfaceemitting laser was simulated using of software based on finite element method. Thenumber of quantum wells was changed from 3 to 9 and the results which are related tooutput power, resonance ...
متن کاملEnergy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2003